DMN3051L
9.0
8.0
7.0
6.0
5.0
4.0
V GS = 10V
V GS = 4.5V
6
5
4
3
V DS = 5V
3.0
2
T A = 150°C
2.0
1.0
V GS = 2.5V
V GS = 3.0V
1
T A = 125°C
T A = 85°C
T A = 25°C
0
0
V GS = 1.8V
0.5 1 1.5 2 2.5
3
0
1.5
2.5
T A = -55°C
3.5
0.1
0.09
0.08
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
0.10
0.09
V GS , GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
T A = 150°C
0.07
0.06
0.05
0.04
V GS = 4.5V
0.08
0.07
0.06
T A = 125°C
T A = 85°C
T A = 25°C
0.03
V GS = 10V
0.05
0.02
0.01
0.04
T A = -55°C
0
0
1 2 3 4 5
I D , DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
6
0.03
0
1 2 3 4 5
I D , DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
6
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
V GS = 10V
I D = 5.8A
V GS = 4.5V
I D = 5A
C iss
C oss
C rss
0.6
-50 -25 0 25 50 75 100 125 150
T J , JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
0
5 10 15 20 25
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 6Typical Capacitance
30
DMN3051L
Document number: DS31347 Rev. 5 - 2
3 of 6
www.diodes.com
October 2013
? Diodes Incorporated
相关PDF资料
DMN3052L-7 MOSFET N-CH 30V 5.4A SOT23-3
DMN3052LSS-13 MOSFET N-CH 30V 7.1A 8-SOIC
DMN3110S-7 MOSFET N-CH 30V 2.5A SOT-23
DMN3112S-7 MOSFET N-CH 30V 5.8A SOT23-3
DMN3112SSS-13 MOSFET N-CH 30V 6A 8SOP
DMN3115UDM-7 MOSFET N-CH 30V 3.2A SOT-26
DMN3135LVT-7 MOSFET N CH 30V 4.1A TSOT26
DMN3150L-7 MOSFET N-CH 28V 3.2A SOT23-3
相关代理商/技术参数
DMN3051LDM 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3051LDM-7 功能描述:MOSFET 30V 4A N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3052L 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3052L-7 功能描述:MOSFET 1.4W 30V 5.4A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3052LSS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3052LSS-13 功能描述:MOSFET SINGLE N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3070SSN-7 制造商:Diodes Incorporated 功能描述:MOSFET N CH 30V 4.2A, SC59 制造商:Diodes Incorporated 功能描述:30V N-CH MOSFET
DMN3110S 制造商:Diodes Incorporated 功能描述:MOSFET N CH 30V 3.3A SOT23 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 30V, 3.3A, SOT23 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 30V, 3.3A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:3.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.054ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:740mW; No. of Pins:3 ;RoHS Compliant: Yes